IRLU3110ZPBF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
IRLU3110ZPbF
HEXFET® Po.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
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